Hybrid Electrothermal Simulation of a Three-Dimensional Fin-Shaped Field-Effect Transistor Based on GaN Nanowires

摘要

In recent years, three-dimensional GaN-based transistors have beenintensively studied for their dramatically improved output power, better gatecontrollability, and shorter channels for speedup and miniaturization. However,thermal analysis of such devices is often oversimplified using the conventionalFourier's law and bulk material properties in thermal simulations. In thisaspect, accurate temperature predictions can be achieved by coupled phonon andelectron Monte Carlo simulations that track the movement and scattering ofindividual phonons and electrons. However, the heavy computational load oftenrestricts such simulations to nanoscale devices, while a real chip is ofmillimeter to centimeter sizes. This issue can be addressed by a hybridsimulation technique that employs the Fourier's law for regions away from thehot spot. Using this technique, accurate electrothermal simulations are carriedout on a nanowire-based GaN transistor to reveal the temperature rise in suchdevices.